
ProMOS 90nm 12-inch wafer volume production to start in September
Le 16 Août 2005 à 08 h 09 - Digitimes
ProMOS Technologies claims it is smoothly migrating to DRAM production on 90nm node at its second 12-inch fab (Fab III), with its first batch of 512Mbit DDR production currently undergoing validation processes among its customers. According to company chairman ML Chen, volume production should start in September and yield rates should reach 80% by November, up from 60% in the initial batch.
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